isc website: 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon. Product specification This data sheet contains final product specifications. No liability will be accepted by the publisher for any consequence of its use. Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.

Refer to mounting instructions for F-pack envelopes.

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Philips customers using or selling these products for use in such applications do so at their own risk and datqsheet to fully indemnify Philips for any damages resulting from such improper use or sale. Stress above one or more of the limiting values may cause permanent damage to the device. Forward bias safe operating area. Reproduction in whole or in part is prohibited without the adtasheet written consent of the copyright owner.

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September 1 Rev 2. SOT; The seating plane is electrically isolated from all terminals.

BU2520AX Datasheet PDF

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Switching times test datssheet.

September 7 Rev 2.

Typical base-emitter saturation voltage. Test circuit for VCEOsust. Typical collector-emitter saturation voltage.

BU2520AX Silicon Diffused Power Transistor

Typical DC current gain. Mounted with heatsink compound. Want to post a buying lead? Typical collector storage and fall time. The information datashfet in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

September 6 Rev 2. September 2 Rev 2.

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. Exposure to limiting values for extended periods may affect device reliability.

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These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Cfb -VBB t Fig.

Oscilloscope display for VCEOsust. How long will receive a response. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal datashert circuits of large screen colour television receivers up to 32 kHz.

BUAX Datasheet PDF –

September 8 Rev 2. UNIT – – 1. September 3 Rev 2. Switching times waveforms 32 kHz.

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use datashet horizontal deflection circuits of large screen colour television receivers.